RSS100N03 transistor 1/3 switching (30v, 10a) RSS100N03 z features 1) low on-resistance. 2) built-in g-s protection diode. 3) small and surface mount package (sop8). z applications power switching, dc/dc converter. z external dimensions (unit : mm) each lead has same dimensions sop8 (1)source (2)source (3)source (4)gate (5)drain (6)drain (7)drain (8)drain 5.0 0.2 0.2 0.1 6.0 0.3 3.9 0.15 0.5 0.1 ( 1 ) ( 4 ) ( 8 ) ( 5 ) max.1.75 1.27 0.15 0.4 0.1 1.5 0.1 0.1 z structure ? silicon n-channel mos fet z equivalent circuit ? a protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use. use the protection circuit when the fixed voltages are exceeded. (1)source (2)source (3)source (4)gate (5)drain (6)drain (7)drain (8)drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (8) (7) (6) (5) (1) (2) (3) (4) (1) (2) (3) (4) (8) (7) (6) (5) z absolute maximum ratings (ta=25 c) ? 1 ? 1 ? 2 parameter v v dss symbol 30 v v gss 20 a i d 10 a i dp 40 a i s 1.6 a i sp 6.4 w p d 2 c tch 150 c tstg ? 55 to + 150 limits unit drain-source voltage gate-source voltage drain current total power dissipatino channel temperature strage temperature continuous pulsed continuous source current (body diode) pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board.
RSS100N03 transistor 2/3 z thermal resistance (ta=25 c) c / w rth (ch-a) 62.5 parameter symbol limits unit channel to ambient ? mounted on a ceramic board. ? z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ?? 10 av gs =20v, v ds =0v v dd 15v typ. max. unit conditions gate-source leakage v (br) dss 30 ?? vi d =1ma, v gs =0v drain-source breakdown voltage i dss ?? 10 av ds =30v, v gs =0v zero gate voltage drain current v gs (th) 1.0 ? 2.5 v v ds =10v, i d =1ma gate threshold voltage ? 9.5 13.0 i d = 10a, v gs =10v static drain-source on-starte resistance r ds (on) ? 12.5 17.2 m ? i d = 10a, v gs =4.5v forward transfer admittance ? 13.5 18.5 i d = 10a, v gs =4v input capacitance 6.0 ?? si d = 10a, v ds =10v output capacitance c iss ? 1070 ? pf v ds =10v reverse transfer capacitance c oss ? 320 200 ? pf v gs =0v tum-on delay time c rss ? 10 ? pf f=1mhz v gs =10v r l =3.0 ? r gs =10 ? rise time t d (on) ? 16 ? ns tum-off delay time t r ? 55 ? ns fall time t d (off) ? 24 ? ns total gate charge t f ? 14 ? ns gate-source charge q g ? 2.7 ? nc gate-drain charge q gs ? 5.3 ? nc v gs =5v q gd ?? nc i d = 10a ? pulsed ? ? ? ? ? ? ? ? ? ? ? i d =5a, v dd 15v z body diode characteristics (source-drain characteristics) (ta=25 c) forward voltage v sd ?? 1.2 v i s =6.4a, v gs =0v parameter symbol min. typ. max. unit conditions ? pulsed ? z electrical characteristic curves 0.01 0.1 1 10 100 drain-source voltage : v ds (v) 10 capacitance : c (pf) 1000 10000 100 ta = 25 c f = 1mhz v ce = 0v fig.1 typical capacitance vs. drain-source voltage c iss c oss c rss 0.01 0.1 1 10 100 drain current : i d (a) 1 10 switching time : t (ns) 1000 10000 100 ta = 25 c v dd = 15v v gs = 10v r g = 10 ? pulsed fig.2 switching characteristics t d(off) t d(on) t r t f 0246810121416 total gate charge : qg (nc) 0 1 2 3 4 5 6 7 8 gate-source voltage : v gs (v) ta = 25 c v dd = 15v i d = 10a r g = 10 ? pulsed fig.3 dynamic input characteristics
RSS100N03 transistor 3/3 0.0 0.5 1.0 1.5 2.0 2.5 3.0 gate-source voltage : v gs (v) 100 10 1 0.1 0.01 0.001 drain current : i d (a) fig.4 typical transfer characteristics ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v ds = 10v pulsed 0246810121416 gate-source voltage : v gs (v) 0 50 100 150 200 250 300 static drain-source on-state resistance : r ds (on) (m ? ) fig.5 static drain-source on-state resistance vs. gate-source voltage ta = 25 c pulsed i d = 10a i d = 5a 0.0 0.5 1.0 1.5 source-drain voltage : v sd (v) 0.01 0.1 1 10 100 source current : i s (a) fig.6 source current vs. source-drain voltage v gs = 0v pulsed ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c 0.01 0.1 1 10 100 drain current : i d (a) 1 10 100 1000 static drain-source on-state resistance : r ds (on) (m ? ) fig.7 static drain-source on-state resistance vs. drain current ( ) ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 10v pulsed 0.01 0.1 1 10 100 drain current : i d (a) 1 10 100 1000 ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c v gs = 4.5v pulsed static drain-source on-state resistance : r ds (on) (m ? ) fig.8 static drain-source on-state resistance vs. drain current ( ? ) v gs = 4v pulsed 1 10 100 1 10 100 1000 ta = ? 25 c ta = 25 c ta = 75 c ta = 125 c drain current : i d (a) static drain-source on-state resistance : r ds (on) (m ? ) fig.9 static drain-source on-state resistance vs. drain current ( ?? )
appendix appendix1-rev1.0 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document use silicon as a basic material. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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